Nanoscale Organic Ferroelectric Resistive Switches

Khikhlovskyi, Vsevolod (author): Eindhoven University of Technology, Netherlands; TNO, Netherlands

Janssen, Rene A. J. (author): Eindhoven University of Technology, Netherlands

Kemerink, Martijn (author): Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands

(creator_code:org_t)

2014-02-03
2014
English.
In: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 118:6, s. 3305-3312

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism. Resistive switching is shown to result from modulation of the charge injection barrier at the semiconductor-electrode interfaces. The modulation is driven by the stray field of the polarization charges in the ferroelectric phase and consequently is restricted to regions where semiconductor and ferroelectric phases exist in close vicinity. Since each semiconductor domain can individually be switched and read out, a novel, nanoscale memory element is demonstrated. An ultimate information density of similar to 30 Mb/cm(2) is estimated for this bottom-up defined memory device.

By the author/editor: Khikhlovskyi, Vs ...; Wang, Rui; van Breemen, Alb ...; Gelinck, Gerwin ...; Janssen, Rene A. ...; Kemerink, Martij ...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.