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LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
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- Sun, J. W. (author)
- Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Zoulis, G. (author)
- Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Lorenzzi, J. (author)
- Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074-GES, 34095 Montpellier Cedex 5, France Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov 1918, 69622 Villeurbanne, France (creator_code:org_t)
- 2010
- 2010
- English.
- In: Silicon Carbide and Related Materials 2009. ; , s. 415-418
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy ( 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Donor-Acceptor Pair
- Photoluminescence (PL)
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- Sun, J. W.
- Zoulis, G.
- Lorenzzi, J.
- Jegenyes, N.
- Juillaguet, S.
- Peyre, H.
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- Souliere, V
- Ferro, G.
- Milesi, F.
- Camassel, J.
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- Silicon Carbide ...
- By the university
- Linköping University
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