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Topological transitions of the Fermi surface of osmium under pressure: an LDA plus DMFT study
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- Feng, Qingguo (author)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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- Ekholm, Marcus (author)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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- Tasnadi, Ferenc (author)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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- (creator_code:org_t)
- 2017-03-13
- 2017
- English.
- In: New Journal of Physics. - : IOP PUBLISHING LTD. - 1367-2630. ; 19
- Journal article (peer-reviewed)
Abstract
Subject headings
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- The influence of pressure on the electronic structure of Os has attracted substantial attention recently due to reports on isostructural electronic transitions in this metal. Here, we theoretically investigate the Fermi surface of Os from ambient to high pressure, using density functional theory combined with dynamical mean field theory. Weprovide a detailed discussion of the calculated Fermi surface and its dependence on the level of theory used for the treatment of the electron-electron interactions. Although we confirm that Os can be classified as weakly correlated metal, the inclusion of local quantum fluctuations between 5d electrons beyond the local density approximation explains the most recent experimental reports regarding the occurrence of electronic topological transitions in Os.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- electronic topological transitions; strong correlations; Fermi surfaces
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Feng, Qingguo
- Ekholm, Marcus
- Tasnadi, Ferenc
- Jönsson, Johan
- Abrikosov, Igor
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- NATURAL SCIENCES
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- Linköping University
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