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Proton migration mechanism for the instability of organic field-effect transistors
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- Sharma, A. (author)
- Technical University of Eindhoven, Netherlands
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- Mathijssen, S. G. J. (author)
- Technical University of Eindhoven, Netherlands; Philips Research Labs, Netherlands
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- Kemerink, M. (author)
- Technical University of Eindhoven, Netherlands
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- American Institute of Physics (AIP), 2009
- 2009
- English.
- In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 95:25
- Journal article (peer-reviewed)
Abstract
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- During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors. (C) 2009 American Institute of Physics. [doi:10.1063/1.3275807]
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- de Leeuw, D. M.
- Bobbert, P. A.
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- Linköping University
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