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Band-gap tailoring of Zno by means of heavy Al doping

Sernelius, Bo, 1948- (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Solid State Dioision, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Berggren, Karl-Fredrik, 1937- (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
Jin,, Z.-C. (author)
Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
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Hamberg, Ivar (author)
Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
Granqvist, Claes Göran (author)
Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
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 (creator_code:org_t)
American Physical Society, 1988
1988
English.
In: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 37:17, s. 10244-10248
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping.The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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