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Enhancement of the ...
Enhancement of the Basal-plane Stacking Fault Emission in GaN Planar Nanowire Microcavity
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- Girshova, E. I (author)
- ITMO Univ, Russia
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- Pozina, Galia (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Belonovskii, A. V (author)
- ITMO Univ, Russia
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- Mitrofanov, M. I (author)
- Russian Acad Sci, Russia; Ioffe Inst, Russia
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- Levitskii, I. V (author)
- Russian Acad Sci, Russia; Ioffe Inst, Russia
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- Voznyuk, G. V. (author)
- ITMO Univ, Russia
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- Evtikhiev, V. P. (author)
- Ioffe Inst, Russia
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- Rodin, S. N. (author)
- Russian Acad Sci, Russia; Ioffe Inst, Russia
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- Kaliteevski, M. A. (author)
- ITMO Univ, Russia
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(creator_code:org_t)
- MAIK NAUKA/INTERPERIODICA/SPRINGER, 2022
- 2022
- English.
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In: JETP Letters. - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 0021-3640 .- 1090-6487. ; 115, s. 574-580
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects are considered. The behavior of an exciton localized in a stacking fault is considered. Different behavior of the photoluminescence intensity and the photoluminescence decay time is observed for the cases under consideration. Theoretical calculations show the localization of the field at the ends of the structure.
Subject headings
- NATURVETENSKAP -- Fysik -- Astronomi, astrofysik och kosmologi (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Astronomy, Astrophysics and Cosmology (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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