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Enhancement of 2DEG...
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
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- Kuhne, Philipp (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Armakavicius, Nerijus (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Papamichail, Alexis (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Tran, Dat (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Stanishev, Vallery (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Schubert, Mathias (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska Lincoln, NE 68588 USA,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC,University of Nebraska - Lincoln
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- Paskov, Plamen (författare)
- Linköping University,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Darakchieva, Vanya (författare)
- Linköping University,Lund University,Lunds universitet,Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH
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(creator_code:org_t)
- AIP Publishing, 2022
- 2022
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 120:25
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https://liu.diva-por... (primary) (Raw object)
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http://dx.doi.org/10... (free)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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Abstract
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- We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1-xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density N s = ( 7.3 +/- 0.7 ) x 10 12 cm(-2), sheet mobility mu s = ( 270 +/- 40 ) cm(2)/(Vs), sheet resistance R- s = ( 3200 +/- 500 ) omega/ ?, and effective mass m( eff) = ( 0.63 +/- 0.04 ) m( 0) at low temperatures ( T = 5 K ) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson-Schrodinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N ( m( eff) = 0.334 m( 0)). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson-Schrodinger calculations .Published under an exclusive license by AIP Publishing.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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