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Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry ß-Ga2O3
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- Schubert, Mathias (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Department of Electrical and Computer Engineering, University of Nebraska - Lincoln, Lincoln, 68588, NE, United States; Leibniz-Institut für Polymerforschung, Dresden, 01069, Germany
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- Mock, Alyssa (författare)
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, 20375, DC, United States; U.S. Naval Research Laboratory, Washington, 20375, DC, United States
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- Korlacki, Rafał (författare)
- Department of Electrical and Computer Engineering, University of Nebraska - Lincoln, Lincoln, 68588, NE, United States
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- Knight, Sean (författare)
- Department of Electrical and Computer Engineering, University of Nebraska - Lincoln, Lincoln, 68588, NE, United States
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- Monemar, Bo (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Goto, Ken (författare)
- Tokyo University of Agriculture and Technology, Tokyo, Koganei, 184-8588, Japan
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- Kumagai, Yoshinao (författare)
- Tokyo University of Agriculture and Technology, Tokyo, Koganei, 184-8588, Japan; Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Tokyo, Koganei, 184-8588, Japan
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- Kuramata, Akito (författare)
- Novel Crystal Technology, Inc., Saitama, Sayama, 350-1305, Japan
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- Galazka, Zbigniew (författare)
- Leibniz-Institut für Kristallzüchtung, Berlin, 12489, Germany
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- Wagner, Günther (författare)
- Leibniz-Institut für Kristallzüchtung, Berlin, 12489, Germany
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- Tadjer, Marko J. (författare)
- U.S. Naval Research Laboratory, Washington, 20375, DC, United States
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- Wheeler, Virginia D. (författare)
- U.S. Naval Research Laboratory, Washington, 20375, DC, United States
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- Higashiwaki, Masataka (författare)
- National Institute of Information and Communications Technology, Tokyo, Koganei, 184-8795, Japan
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- 2020-04-24
- 2020
- Engelska.
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Ingår i: Gallium Oxide. - Cham : Springer. - 9783030371524 - 9783030371555 - 9783030371531 ; , s. 501-534
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We present and discuss the complete set of infrared-active phonon modes in monoclinic-symmetry crystal modification gallium oxide (gallia, ββ-Ga2O3). The phonon mode set is obtained from a comprehensive analysis of generalized spectroscopic ellipsometry data in the farinfrared and infrared spectral regions investigating various n-type electrically conductive single crystal samples with different free electron volume density parameters cut under different orientations. The analysis of the ellipsometry data is performed using an eigendielectric displacement vector summation (EDVS) approach. In this approach, the effect of the free charge carriers onto the lattice modes of intrinsic ββ-Ga2O3 are removed by calculation. Density functional theory calculations are performed in the general gradient approximation and all phonon modes at the Brillouin-center and their displacement direction dependencies are obtained. Transverse and longitudinal optical phonon mode parameters polarized within the monoclinic plane as well as perpendicular to the monoclinic plane agree excellently between experiment and theory. We also present and discuss the directional limiting frequency parameters within the monoclinic plane, the shape and anisotropy of the reststrahlen band, and the order of the phonon modes in semiconductors with polar phonon modes and monoclinic crystal structure. We further present and discuss the effect of coupling of longitudinal optical phonons with free charge carriers, leading to longitudinal-phonon-plasmon coupled modes. We reveal that the coupled modes, which affect electric and thermal transport, change amplitude, frequency, and direction within the monoclinic plane as a function of free electron concentration. Finally, we show optical Hall effect measurements, and provide experimentally determined effective electron mass parameters in ββ-Ga2O3 for moderately-doped n-type samples.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Schubert, Mathia ...
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Mock, Alyssa
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Korlacki, Rafał
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Knight, Sean
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Monemar, Bo
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Goto, Ken
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Kumagai, Yoshina ...
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Kuramata, Akito
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Galazka, Zbignie ...
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Wagner, Günther
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Tadjer, Marko J.
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Wheeler, Virgini ...
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Higashiwaki, Mas ...
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Darakchieva, Van ...
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Gallium Oxide
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Linköpings universitet