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Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
- Zolnai, Z (author)
-
- Nguyen, Son Tien, 1953- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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- Hallin, Christer, 1963- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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- (creator_code:org_t)
- AIP Publishing, 2004
- 2004
- English.
- In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:4, s. 2406-2408
- Journal article (peer-reviewed)
Abstract
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- The annealing behavior of the positively charged carbon vacancy in electron-irradiated 4H-SiC was studied. Electron paramagnetic resonance was used for the purpose of analysis. It was found that around 1000 °C, the EPR signal of the defect starts decreasing. Clear ligand hyperfine structure was also observed after annealing at 1350 °C. Results show that the EI6 center may be the positively charged carbon vacancy at the hexagonal lattice site of 4H-SiC.
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- NATURAL SCIENCES
- NATURVETENSKAP
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