Activation of shallow boron acceptor in CB coimplanted silicon carbide: A theoretical study

Activation of shallow boron acceptor in CB coimplanted silicon carbide : A theoretical study

Gali, A (author)

Hornos, T (author)

Deák, P (author)

Nguyen, Son Tien, 1953- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Janzén, Erik, 1954- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Choyke, W (author)

(creator_code:org_t)

AIP Publishing, 2005
2005
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:10, s. 102108-

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Ab initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron interstitial is energetically favored in silicon carbide. These bistable boron defects possess deep, negative- U occupation levels in the band gap. The theoretical results can explain the observed activation rates in carbon-boron coimplantation experiments. © 2005 American Institute of Physics.

By the author/editor: Gali, A; Hornos, T; Deák, P; Nguyen, Son Tien ...; Janzén, Erik, 19 ...; Choyke, W

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