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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN
- Malinauskas, T. (author)
- Aleksiejunas, R. (author)
- Jarasiunas, K. (author)
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- Beaumont, B. (author)
- Gibart, P. (author)
- Heuken, M. (author)
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- (creator_code:org_t)
- Elsevier BV, 2007
- 2007
- English.
- In: Journal of Crystal Growth, Vol. 300. - : Elsevier BV. - 0022-0248. ; , s. 223-227
- Conference paper (peer-reviewed)
Abstract
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- The metrological capability of the picosecond four-wave mixing (FWM) technique for evaluation of the photoelectrical properties of GaN heterostructures grown on sapphire, silicon carbide, and silicon substrates as well as of free-standing GaN films is demonstrated. Carrier recombination and transport features have been studied in a wide excitation, temperature, and dislocation density (from ∼1010 to 106 cm-2) range, exploring non-resonant refractive index modulation by a free carrier plasma. The studies allowed to establish the correlations between the dislocation density and the carrier lifetime, diffusion length, and stimulated emission threshold, to reveal a competition between the bimolecular and nonradiative recombination, and to verify the temperature dependence of bimolecular recombination coefficient in the 10-300 K temperature range. It was shown that the FWM technique is more advantageous than the time-resolved photoluminescence technique for determination of carrier lifetimes in high quality thick III-nitride layers. © 2006 Elsevier B.V. All rights reserved.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- kon (subject category)
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