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Deep Levels Respons...
Deep Levels Responsible for Semi-insulating Behaviour in Vanadium-doped 4H-SiC Substrates
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- Nguyen, Son Tien, 1953- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Carlsson, Patrick, 1975- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Gällström, Andreas, 1978- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Magnusson, Björn, 1970- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Trans Tech Publications, 2009
- 2009
- Engelska.
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Ingår i: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 401-404
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic resonance. We show that only in heavily V-doped 4H-SiC vanadium is responsible for the SI behavior, whereas in moderate V-doped substrates with the V concentration comparable or slightly higher than that of the shallow N donor or B acceptor, the SI properties are thermally unstable and determined by intrinsic defects. The results show that the commonly observed thermal activation energy Ea~1.1 eV in V-doped 4H-SiC, which was previously assigned to the single acceptor V4+/3+ level, may be related to deep levels of the carbon vacancy. Carrier compensation processes involving deep levels of V and intrinsic defects are discussed and possible thermal activation energies are suggested.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)