Single Crystal and Polycrystalline 3C-SiC for MEMS Applications

Henry, Anne, 1959- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Janzén, Erik, 1954- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Mastropaolo, E. (author)

Cheung, R. (author)

(creator_code:org_t)

Trans Tech Publications, 2009
2009
English.
In: Materials Science Forum Vols. 615-617. - : Trans Tech Publications. - 9780878493340 ; , s. 625-628

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.4...; show less...

Abstract Subject headings

Cantilever resonators have been fabricated from two types of materials, single crystal and polycrystalline 3C-SiC films. The films have been grown in a hot-wall chemical vapor deposition reactor on 100 mm diameter p-type boron-doped (100) Si wafer without rotation of the wafer. The crystal structure of the films have been accessed with X-ray diffraction. The cantilever devices have been fabricated using a one-step etch and release process; the beam length has been varied between 50 and 200 µm. Resonant frequencies in the range 110 KHz – 1.5 MHz and 50 – 750 KHz have been obtained for single crystal and polycrystalline SiC devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate the Young’s Modulus E for the two different types of SiC. The single crystal SiC, possessing a very high Young’s Modulus (446 GPa), should be an optimal material for RF-MEMS applications.

By the author/editor: Henry, Anne, 195 ...; Janzén, Erik, 19 ...; Mastropaolo, E.; Cheung, R.

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