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Mechanism for rapid...
Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
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- Buyanova, Irina, 1960- (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Pozina, Galia, 1966- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Hai, P. N. (author)
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Thinh, N. Q. (author)
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- Bergman, Peder, 1961- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Chen, Weimin, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Xin, H. P. (author)
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Tu, C. W. (author)
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(creator_code:org_t)
- AIP Publishing, 2000
- 2000
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 77:15, s. 2325-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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- ref (subject category)
- art (subject category)
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Buyanova, Irina, ...
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Pozina, Galia, 1 ...
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Hai, P. N.
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Thinh, N. Q.
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Bergman, Peder, ...
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Chen, Weimin, 19 ...
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show more...
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Xin, H. P.
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Tu, C. W.
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show less...
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Applied Physics ...
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Linköping University