Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy

Buyanova, Irina, 1960- (author): Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material

Pozina, Galia, 1966- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Hai, P. N. (author)

Thinh, N. Q. (author)

Bergman, Peder, 1961- (author): Linköpings universitet,Tekniska högskolan,Halvledarmaterial

Chen, Weimin, 1959- (author): Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material

Xin, H. P. (author)

Tu, C. W. (author)

(creator_code:org_t)

AIP Publishing, 2000
2000
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 77:15, s. 2325-

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies.

By the author/editor: Buyanova, Irina, ...; Pozina, Galia, 1 ...; Hai, P. N.; Thinh, N. Q.; Bergman, Peder, ...; Chen, Weimin, 19 ...; show more...; Xin, H. P.; Tu, C. W.; show less...

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