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In-situ stress measurement during the deposition of CN x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation
- Brunell, I.F. (author)
-
- Pichon, L. (author)
- Lab. de Mëtallurgie Physique, UMR 6630-CNRS, Téléport 2, Boulevard Pierre et Marie Curie, Chasseneuil Cédex, France
-
- Hellgren, N. (author)
- Materials Research Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801, United States
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- Lab de Mëtallurgie Physique, UMR 6630-CNRS, Téléport 2, Boulevard Pierre et Marie Curie, Chasseneuil Cédex, France Materials Research Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801, United States (creator_code:org_t)
- Informa UK Limited, 2004
- 2004
- English.
- In: Philosophical Magazine Letters. - : Informa UK Limited. - 0950-0839 .- 1362-3036. ; 84:6, s. 395-403
- Journal article (peer-reviewed)
Abstract
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- Stress development during growth of CN x films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7 GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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- Brunell, I.F.
- Pichon, L.
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- Czigany, Zsolt
- Neidhardt, Jörg
- Hultman, Lars
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- Linköping University
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