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A solid phase react...
A solid phase reaction between Ti Cx thin films and Al2 O3 substrates
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- Persson, P.O.A. (författare)
- Persson, P.O.Å., School of Physics, University of Sydney, NSW 2006, Australia
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- Rosen, Johanna (författare)
- School of Physics, University of Sydney, NSW 2006, Australia
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- McKenzie, D.R. (författare)
- School of Physics, University of Sydney, NSW 2006, Australia
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- Bilek, M.M.M. (författare)
- School of Physics, University of Sydney, NSW 2006, Australia
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- Höglund, Carina (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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Persson, PO.Å., School of Physics, University of Sydney, NSW 2006, Australia School of Physics, University of Sydney, NSW 2006, Australia (creator_code:org_t)
- AIP Publishing, 2008
- 2008
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103:6
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Ti Cx thin films were deposited on Al2 O3 substrates at 900 °C by using a multiple cathode high current pulsed cathodic arc. The Ti:C pulse ratio and, hence, the composition was varied from C rich to Ti rich. It is found that the Al2 O3 substrate is decomposed and reacts with the Ti Cx film to incorporate significant amounts of O and Al in the growing film. When the stoichiometry is suitable, epitaxially oriented Ti2 AlC MAX phase with significant O incorporated is formed. The results indicate that Al2 O3 is not an ideal substrate material for the growth of transition metal carbides and MAX phase thin films. © 2008 American Institute of Physics.
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