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Characteristics of ...
Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures
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Wang, Z. (author)
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- Kugler, Veronika Mozhdeh (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Helmersson, Ulf (author)
- Linköpings universitet,Tekniska högskolan,Plasma och ytbeläggningsfysik
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- Evangelou, E.K. (author)
- Applied Physics Laboratory, Department of Physics, University of Ioannina, 451 10 Ioannina, Greece
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- Konofaos, N. (author)
- Applied Physics Laboratory, Department of Physics, University of Ioannina, 451 10 Ioannina, Greece
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- Nakao, S. (author)
- National Institute of AIST Chubu, Nagoya 462-8510, Japan
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- Jin, P. (author)
- National Institute of AIST Chubu, Nagoya 462-8510, Japan
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(creator_code:org_t)
- Informa UK Limited, 2002
- 2002
- English.
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In: Philosophical Magazine B. - : Informa UK Limited. - 1364-2812 .- 1463-6417. ; 82:8, s. 891-903
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3 µm cm-2. However, the films deposited at 200°C showed the lowest density of bulk trapped charges (150nC cm-2) and interface states ((1.2-6.1) × 1011 cm-2 eV-1), and are therefore considered to be the most suitable for device applications.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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