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Electrical characterisation of SrTiO3/Si interfaces
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- Konofaos, N. (author)
- Department of Physics, University of Ioannina, P.O. Box 1186, 451 10 Ioannina, Greece
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- Evangelou, E.K. (author)
- Department of Physics, University of Ioannina, P.O. Box 1186, 451 10 Ioannina, Greece
- Wang, Z. (author)
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- Department of Physics, University of Ioannina, PO. Box 1186, 451 10 Ioannina, Greece Tekniska högskolan (creator_code:org_t)
- 2002
- 2002
- English.
- In: Journal of Non-Crystalline Solids. - 0022-3093 .- 1873-4812. ; 303:1, s. 185-189
- Journal article (peer-reviewed)
Abstract
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- Deposition of SrTiO3 (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (Dit) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of Dit between 2 × 1011 and 3.5 × 1012 eV-1 cm-2 while the higher temperature deposited samples had a higher Dit ranging between 1 × 1011 and 1 × 1013 eV-1 cm-2. The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry. © 2002 Elsevier Science Ltd. All rights reserved.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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