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Effects of separate...
Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots
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- Moskalenko, Evgenii (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Karlsson, Fredrik (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Donchev, V.T. (author)
- Faculty of Physics, Sofia University, 5, Boulevard James Bourchier, 1164-Sofia, Bulgaria
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- Holtz, Per-Olof (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Monemar, Bo (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Schoenfeld, W.V. (author)
- Materials Department, University of California, Santa Barbara, CA 93106
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- Petroff, P.M. (author)
- Materials Department, University of California, Santa Barbara, CA 93106
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(creator_code:org_t)
- 2005-09-29
- 2005
- English.
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In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 5:11, s. 2117-2122
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot density and/or sample temperature, the increase of the luminescence intensity vanishes progressively, while the possibility to control the dot charge remains. © 2005 American Chemical Society.
Subject headings
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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