Thermal Stability and Phase Transformations of γ-/Amorphous-Al2O3 Thin Films

Eklund, Per, 1977- (author): Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan

Sridharan, M. (author): Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark

Singh, G. (author): Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark

Bottiger, Jorgen (author): Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark

(creator_code:org_t)

2009-03-17
2009
English.
In: Plasma processes and polymers. - : Wiley. - 1612-8850. ; 6:1, s. 907-911

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Magnetron-sputtered Al2O3 thin films were annealed in ambient air. The phase compositions of the as-deposited Al2O3 films were (i) fully amorphous, (ii) nanocrystalline γ-Al2O3 in an amorphous Al2O3 matrix, and (iii) fully crystalline γ. For all samples, annealing to 1 100-1 150 °C resulted in a transformation to α-alumina. The transformation paths depend on the phase fraction of γ in the as-deposited films. For amorphous films and films with low initial γ fraction, the intermediate phase θ-Al2O3 appeared in the range of 1 000-1 100 °C. For predominantly crystalline γ-Al2O3 as-deposited films no intermediate Al2O3 phases were observed, indicating a direct γ-to-α phase transformation at ≈1 100 °C.

By the author/editor: Eklund, Per, 197 ...; Sridharan, M.; Singh, G.; Bottiger, Jorgen

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