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Direct graphene gro...
Direct graphene growth on Co3O4(111) by molecular beam epitaxy
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- Zhou, Mi (författare)
- University of N Texas
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- Pasquale, Frank L (författare)
- University of N Texas
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- Dowben, Peter A (författare)
- University of Nebraska Lincoln
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- Boosalis, Alex (författare)
- University of Nebraska Lincoln
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- Schubert, Mathias (författare)
- University of Nebraska Lincoln
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kong, Lingmei (författare)
- University of Nebraska Lincoln
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- Kelber, Jeffry A (författare)
- University of N Texas
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(creator_code:org_t)
- 2012-01-06
- 2012
- Engelska.
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Ingår i: Journal of Physics. - : Institute of Physics. - 0953-8984 .- 1361-648X. ; 24:7, s. 072201-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Direct growth of graphene on Co3O4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp2 carbon film with a lattice constant of 2.5(+/-0.1) angstrom characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 ML. The LEED data also indicate an average domain size of similar to 1800 angstrom, and show an incommensurate interface with the Co3O4(111) substrate, where the latter exhibits a lattice constant of 2.8(+/-0.1) angstrom. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected pi to pi* satellite feature, but with a binding energy for the 3 ML film of 284.9(+/-0.1) eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO2 or grown on SiC substrates, but with the pi to pi* absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge- and spin-based devices.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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