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Modeling and Digital Predistortion of Class-D Outphasing RF Power Amplifiers

Landin, Per Niklas, 1983- (author)
Högskolan i Gävle,KTH,Signalbehandling,ACCESS Linnaeus Centre,Elektronik,University of Gavle, Sweden KTH Royal Institute Technology, Belgium Vrije University of Brussel, Belgium
Fritzin, Jonas (author)
Linköpings universitet,Elektroniska komponenter,Tekniska högskolan,University of Linköping,Department of Electrical Engineering
Van Moer, Wendy (author)
University of Gavle, Sweden Vrije University of Brussel, Belgium,Vrije Universiteit Brussel,IR/ELEC
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Isaksson, Magnus (author)
Högskolan i Gävle,Elektronik,Eletronik,University of Gavle, Sweden
Alvandpour, Atila (author)
Linköpings universitet,Elektroniska komponenter,Tekniska högskolan,University of Linköping,Department of Electrical Engineering
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2012
2012
English.
In: IEEE transactions on microwave theory and techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 60:6, s. 1907-1915
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • This paper presents a direct model structure for describing class-D outphasing power amplifiers (PAs) and a method for digitally predistorting these amplifiers. The direct model structure is based on modeling differences in gain and delay, nonlinear interactions between the two paths, and differences in the amplifier behavior. The digital predistortion method is designed to operate only on the input signals phases, to correct for both amplitude and phase mismatches. This eliminates the need for additional voltage supplies to compensate for gain mismatch. less thanbrgreater than less thanbrgreater thanModel and predistortion performance are evaluated on a 32-dBm peak-output-power class-D outphasing PA in CMOS with on-chip transformers. The excitation signal is a 5-MHz downlink WCDMA signal with peak-to-average power ratio of 9.5 dB. Using the proposed digital predistorter, the 5-MHz adjacent channel leakage power ratio (ACLR) was improved by 13.5 dB, from -32.1 to -45.6 dBc. The 10-MHz ACLR was improved by 6.4 dB, from -44.3 to -50.7 dBc, making the amplifier pass the 3GPP ACLR requirements.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Keyword

Behavioral modeling
digital predistortion
LINC
outphasing amplifier
power amplifiers (PAs)
TECHNOLOGY
TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)
art (subject category)

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