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Growth of Hard Amor...
Growth of Hard Amorphous Ti-Al-Si-N Thin Films by Cathodic Arc Evaporation
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- Fager, Hanna (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Andersson, J. M. (author)
- Seco Tools AB, SE-737 82 Fagersta, Sweden
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- Johansson, Mats (author)
- Linköpings universitet,Nanostrukturerade material,Tekniska högskolan
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- Odén, Magnus (author)
- Linköpings universitet,Nanostrukturerade material,Tekniska högskolan
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- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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(creator_code:org_t)
- Elsevier BV, 2013
- 2013
- English.
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In: Surface & Coatings Technology. - : Elsevier BV. - 0257-8972 .- 1879-3347. ; 235:25, s. 376-385
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Abstract
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- Ti(1−x−y)AlxSiyNz (0.02≤x≤0.46, 0.02≤y≤0.28, and 1.08≤z≤1.29) thin films were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti-Al-Si compound cathodes in a N2 atmosphere. The microstructure of the as-deposited films changes from nanocrystalline to amorphous by addition of Al and Si to TiN. Upon incorporation of 12 at% Si and 18 at% Al, the films assume an x-ray amorphous state. Post-deposition anneals show that the films are thermally stable up to 900 ◦C. The films exhibit age hardening up to 1000 ◦C with an increase in hardness from 21.9 GPa for as-deposited films to 31.6 GPa at 1000 ◦C. At 1100 ◦C severe out-diffusion of Co and W from the substrate occur, and the films recrystallize into c-TiN and w-AlN.
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- ref (subject category)
- art (subject category)
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