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Improvement of Crys...
Improvement of Crystalline and Photoluminescence of Atomic Layer Deposited m-Plane ZnO Epitaxial Films by Annealing Treatment
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- Yang, S (author)
- National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Lin, B H (author)
- National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Kuo, C C (author)
- National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Hsu, H C (author)
- Linköpings universitet,Halvledarmaterial,National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan
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- Liu, W-R (author)
- National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Eriksson, M O (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Holtz, Per-Olof (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Chang, C-S (author)
- National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Hsu, C-H (author)
- National Synchrotron Radiat Research Centre, Taiwan National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan
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- Hsieh, W F (author)
- National Chiao Tung University, Taiwan National Chiao Tung University, Taiwan National Cheng Kung University, Taiwan National Cheng Kung University, Taiwan
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(creator_code:org_t)
- 2012-08-27
- 2012
- English.
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In: Crystal Growth & Design. - : American Chemical Society. - 1528-7483 .- 1528-7505. ; 12:10, s. 4745-4751
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Monocrystalline m-plane ZnO epitaxial films with flat surface morphology were grown on m-plane sapphire by using atomic layer deposition. X-ray diffraction and transmission electron microscopy measurements verify not only the in-plane epitaxial relationship of the as-grown films as (10 (1) over bar0)andlt; 0001 andgt;(ZnO)parallel to(10 (1) over bar0)andlt;(1) over bar2 (1) over bar0 andgt; Al2O3 but also the absence of domains with undesirable orientations, which are generally obtained in the m-plane ZnO films grown by other methods. Experimental results indicate that the basal plane stacking fault (BSF) is the dominant structural defects that contribute to the emission at 3.31 eV in m-plane ZnO films. Exactly how thermal annealing affects the structural and optical properties of ZnO epi-films was also investigated. Additionally, based on time-resolved photoluminescence at 5 K, the decay time of BSF related emission and near-band-edge (NBE) emission were determined. Results of this work further demonstrated that the decay time of NBE emission increases with a higher annealing temperature, accompanied by an improvement in crystal structure.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Yang, S
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Lin, B H
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Kuo, C C
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Hsu, H C
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Liu, W-R
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Eriksson, M O
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Holtz, Per-Olof
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Chang, C-S
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Hsu, C-H
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Hsieh, W F
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- Articles in the publication
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Crystal Growth & ...
- By the university
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Linköping University