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Effect of Mg doping...
Effect of Mg doping on the structural and free-charge carrier properties of InN
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- Xie, Mengyao (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Sedrine, Ben (författare)
- IST/ITN Instituto Superior Técnico, Universidade Técnica de Lisboa, Portugal
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- Hong, L. (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Monemar, Bo (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Schöche, S. (författare)
- Department of Electrical Engineering, Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A
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- Hofmann, T. (författare)
- Department of Electrical Engeneering, University of Nebraska, Lincoln, Nebraska 68588
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- Schubert, M. (författare)
- Department of Electrical Engeneering, University of Nebraska, Lincoln, Nebraska 68588
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- Wang, X (författare)
- Graduate School of electrical and Electronics Engineering and InN-Project as a CREST program of JST, Chiba University, Japan
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- Yoshikawa, A. (författare)
- Graduate School of electrical and Electronics Engineering and InN-Project as a CREST program of JST, Chiba University, Japan
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- Wang, K. (författare)
- Research Organization of Science and Engineering, Ritsumeikan University, Japan
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- Araki, T. (författare)
- Department of Photonics, Ritsumeikan University, Japan
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- Darakchieva, Vanya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Nanishi, Y. (författare)
- Department of Photonics, Ritsumeikan University, Japan/WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Republic of Korea
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(creator_code:org_t)
- AIP Publishing, 2014
- 2014
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 115:16, s. 163504-
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We study the structural and free-charge carrier properties of two sets of InN films grown by molecular beam epitaxy doped with different Mg concentrations from 1x1018 cm-3 to 3.9x1021 cm-3. We determine the effect of Mg doping on surface morphology, lattice parameters, structural characteristics and carrier properties. We show that infrared spectroscopic ellipsometry can be used to evidence successful p-type doping in InN, which is an important issue in InN. High resolution X-ray diffraction, combined with atomic force microscopy measurements reveals a drastic decrease in structural quality of the film for Mg concentrations above 1020 cm-3, accompanied with a significant increase in surface roughness. In addition, a decrease of the c-lattice parameter and an increase of the a-lattice parameter are found with increasing Mg concentration. Different contributions to the strain are discussed and it is suggested that the incorporation of Mg leads to a change of growth mode and generation of tensile growth strain. At high Mg concentrations zinc-blende InN inclusions appear which are suggested to originate from higher densities of stacking faults. Infrared spectroscopic ellipsometry analysis shows a reduced LPP-coupling, manifested as a characteristic dip in the IRSE data, and qualitatively different broadening behavior for Mg concentrations between 1.1x1018 cm−3 and 2.9x1019 cm−3 indicate the existence of a p-type conducting bulk InN layer for these Mg concentrations.
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Xie, Mengyao
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Sedrine, Ben
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Hong, L.
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Monemar, Bo
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Schöche, S.
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Hofmann, T.
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visa fler...
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Schubert, M.
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Wang, X
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Yoshikawa, A.
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Wang, K.
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Araki, T.
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Darakchieva, Van ...
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Nanishi, Y.
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Linköpings universitet