Evaluation of gas mixtures with high-temperature gas sensors based on silicon carbide

Arbab, A. (author): Linköpings universitet,Tillämpad Fysik,Tekniska högskolan

Spetz, Anita (author): Linköpings universitet,Tillämpad Fysik,Tekniska högskolan

Lundström, Ingemar (author): Linköpings universitet,Tillämpad Fysik,Tekniska högskolan

(creator_code:org_t)

Elsevier, 1994
1994
English.
In: Sensors and actuators. B, Chemical. - : Elsevier. - 0925-4005 .- 1873-3077. ; 19:1-3, s. 562-565

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Field-effect devices with a catalytic metal gate are operated as gas sensors over a large temperature range by the use of 6H-silicon carbide (bandgap 2.9 eV) instead of silicon (1.1 eV) as the semiconducting material. We have produced metal-silicon dioxide-silicon carbide (MOSiC) capacitors with platinum as the gate metal that can be operated above 800-degrees-C. The sensitivity of the Pt-MOSiC devices to hydrogen and hydrocarbons was tested in various oxygen atmospheres. The response to mixtures of hydrogen and saturated hydrocarbons indicated the existence of two different sensing mechanisms.

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