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Comment on "Role pl...
Comment on "Role played by N and N-N impurities in type-IV semiconductors"
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- Rasmussen, F Berg (author)
- University of Aarhus
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- Nielsen, B Bech (author)
- University of Aarhus
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- Jones, R (author)
- University of Exeter
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- Öberg, Sven (author)
- Luleå tekniska universitet,Matematiska vetenskaper
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(creator_code:org_t)
- 1995
- 1995
- English.
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 51:20, s. 14756-14757
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In a recent paper [Phys. Rev. B 48, 17 806 (1993)] Cunha, Canuto, and Fazzio reported ab initio Hartree-Fock calculations on nitrogen impurities in group-IV semiconductors. In their paper it is suggested that nitrogen pairs form from substitutional atoms on adjacent lattice sites. However, the experimentally observed configuration in silicon and germanium is different from this. The aim of this Comment is to clarify the situation of the nitrogen pair in these materials.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publication and Content Type
- vet (subject category)
- art (subject category)
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