Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon

Vaqueiro-Contreras, Michelle (författare): Photon Science Institute, University of Manchester

Markevich, Vladimir P. (författare): Photon Science Institute, University of Manchester

Halsall, Matthew P. (författare): Photon Science Institute, University of Manchester

Peaker, Anthony R. (författare): Photon Science Institute, University of Manchester

Santos, Paulo (författare): Department of Physics and I3N, University of Aveiro, Campus Santiago

Coutinho, José (författare): Department of Physics and I3N, University of Aveiro, Campus Santiago

Murin, L.I. (författare): Materials Research Center of NAS of Belarus, Minsk

(creator_code:org_t)

2017-06-27
2017
Engelska.
Ingår i: Physica Status Solidi. Rapid Research Letters. - : John Wiley & Sons. - 1862-6254 .- 1862-6270. ; 11:8

Relaterad länk:: https://urn.kb.se/re...; visa fler...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

Stäng

It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years, these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in the formation of powerful recombination centers composed of carbon, oxygen, and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material

Av författaren/redakt...: Vaqueiro-Contrer ...; Markevich, Vladi ...; Halsall, Matthew ...; Peaker, Anthony ...; Santos, Paulo; Coutinho, José; visa fler...; Öberg, Sven; Murin, L.I.; Falser, R.; Binns, J.; Monakhov, E.V.; Svensson, B.G.; visa färre...

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