id:"swepub:oai:DiVA.org:miun-3502"
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02708naa a2200373 4500 | |
| 001 | oai:DiVA.org:miun-3502 | |
| 003 | SwePub | |
| 008 | 080930s2001 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-35022 URI |
| 024 | 7 | a https://doi.org/10.1016/S0169-4332(01)00498-62 DOI |
| 040 | a (SwePub)miun | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Martinez, Au Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-16440 Stockholm4 aut |
| 245 | 1 0 | a A Monte Carlo Study of low field transport in Al doped 4H-SiC |
| 264 | 1 | c 2001 |
| 338 | a print2 rdacarrier | |
| 500 | a The paper was also presented at the following conference: Spring Meeting of the European-Materials-Research-Society STRASBOURG, FRANCE, JUN 05-08, 2001 European Mat Res Soc | |
| 520 | a The ohmic transport of holes in p-type aluminum-doped 4H-SiC samples is investigated using a Monte Carlo (MC) tool based on a full-potential band structure. The temperature and doping dependence of the hole mobility and its anisotropy are calculated and discussed from a physical point of view, where we stress the importance of considering two-band conduction. Acoustic and optical phonon scattering, as well as ionized and neutral impurity scattering, have been considered. The MC program considers incomplete ionization of impurity atoms, and we assume an impurity level with the ionization energy 0.2 eV, corresponding to Al-doped samples. © 2001 Published by Elsevier Science B.V | |
| 653 | a 4H-SiC | |
| 653 | a Anisotropy | |
| 653 | a Mobility | |
| 653 | a Monte Carlo simulation | |
| 653 | a NATURAL SCIENCES | |
| 653 | a NATURVETENSKAP | |
| 700 | 1 | a Hjelm, Matsu Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)4 aut0 (Swepub:miun)mathje |
| 700 | 1 | a Lindefelt, Ulfu Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-16440 Stockholm4 aut0 (Swepub:miun)ullind |
| 700 | 1 | a Nilsson, Hans-Eriku Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)4 aut0 (Swepub:miun)hannil |
| 710 | 2 | a Department of Microelectronics and Information Technology, Royal Institute of Technology (KTH), Electrum 229, SE-16440 Stockholmb Institutionen för informationsteknologi och medier (-2013)4 org |
| 773 | 0 | t Applied Surface Scienceg 184:1-4, s. 173-177q 184:1-4<173-177x 0169-4332x 1873-5584 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-3502 |
| 856 | 4 8 | u https://doi.org/10.1016/S0169-4332(01)00498-6 |
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