Search: id:"swepub:oai:DiVA.org:miun-38482" >
Study of selective ...
Study of selective isotropic etching Si1−xGex in process of nanowire transistors
-
Li, J. (author)
-
Wang, W. (author)
-
Li, Y. (author)
-
show more...
-
Zhou, N. (author)
-
Wang, G. (author)
-
Kong, Z. (author)
-
Fu, J. (author)
-
Yin, X. (author)
-
Li, C. (author)
-
Wang, X. (author)
-
Yang, H. (author)
-
Ma, X. (author)
-
Han, J. (author)
-
Zhang, J. (author)
-
Wei, Y. (author)
-
Hu, T. (author)
-
Yang, T. (author)
-
Li, J. (author)
-
Yin, H. (author)
-
Zhu, H. (author)
-
- Radamson, Henry H. (author)
- Mittuniversitetet,Institutionen för elektronikkonstruktion
-
show less...
-
(creator_code:org_t)
- 2019-10-05
- 2020
- English.
-
In: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 31:1, s. 134-143
- Related links:
-
https://doi.org/10.1...
-
show more...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- On approach towards the end of technology roadmap, a revolutionary approach towards the nanowire transistors is favorable due to the full control of carrier transport. The transistor design moves toward vertically or laterally stacked Gate-All-Around (GAA) where Si or SiGe can be used as channel material. This study presents a novel isotropic inductively coupled plasma (ICP) dry etching of Si1−xGex (0.10 ≤ x ≤ 0.28) in SiGe/Si multilayer structures (MLSs) with high selectivity to Si, SiO2, Si3N4 and SiON which can be applied in advanced 3D transistors and Micro-Electro-Mechanical System (MEMS) in future. The profile of SiGe etching for different thicknesses, compositions and locations in MLSs using dry or wet etch have been studied. A special care has been spent for layer quality of Si, strain relaxation of SiGe layers as well as residual contamination during the etching. In difference with dry etching methods (downstream remote plasma), the conventional ICP source in situ is used where CF4/O2/He gas mixture was used as the etching gas to obtain higher selectivity. Based on the reliability of ICP technique a range of etching rate 25–50 nm/min can be obtained for accurate isotropic etching of Si1−xGex, to form cavity in advanced 3D transistor processes in future.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Dry etching; Inductively coupled plasma; MEMS; Nanowires; Si-Ge alloys; Silica; Transistors
- Channel materials; Inductively coupled plasma (ICP); Micro electromechanical system (MEMS); Multilayer structures; Nanowire transistors; Technology roadmaps; Transistor designs; Transistor process
- Nitrogen compounds
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Li, J.
-
Wang, W.
-
Li, Y.
-
Zhou, N.
-
Wang, G.
-
Kong, Z.
-
show more...
-
Fu, J.
-
Yin, X.
-
Li, C.
-
Wang, X.
-
Yang, H.
-
Ma, X.
-
Han, J.
-
Zhang, J.
-
Wei, Y.
-
Hu, T.
-
Yang, T.
-
Yin, H.
-
Zhu, H.
-
Radamson, Henry ...
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Electrical Engin ...
- Articles in the publication
-
Journal of mater ...
- By the university
-
Mid Sweden University