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On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films
- Horwat, David (author)
- Jullien, Maud (author)
- Capon, Fabien (author)
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- Pierson, Jean-Francois (author)
- Luis Endrino, Jose (author)
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- (creator_code:org_t)
- 2010-03-18
- 2010
- English.
- In: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 43:13, s. 132003-
- Journal article (peer-reviewed)
Abstract
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- We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Physics
- Fysik
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- ref (subject category)
- art (subject category)
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- Uppsala University
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