Sputter yield amplification by tungsten doping of Al(2)O(3) employing reactive serial co-sputtering: process characteristics and resulting film properties

Sputter yield amplification by tungsten doping of Al(2)O(3) employing reactive serial co-sputtering : process characteristics and resulting film properties

Austgen, M (author): Institute of Physics (IA), RWTH Aachen University, Tyskland

Koehl, D (author): Institute of Physics (IA), RWTH Aachen University, Tyskland

Zalden, P (author): Institute of Physics (IA), RWTH Aachen University, Tyskland

Kubart, Tomas (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group

Nyberg, Tomas (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group

Berg, Sören (author): Uppsala universitet,Fasta tillståndets elektronik,Thin Films Group

Wuttig, M (author): Institute of Physics (IA), and, JARA-FIT, RWTH Aachen University, Tyskland

(creator_code:org_t)

2011-08-10
2011
English.
In: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 44:34, s. 345501-

Related links:: https://hal.archives...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

The deposition rate of reactively sputtered Al(2)O(3) coatings is demonstrated to increase by 80% upon tungsten doping of the used aluminium target. This effect is based on the recoil of the sputtering species at implanted dopants below the target surface and is termed sputter yield amplification. For the investigation of this effect, a novel type of magnetron sputter deposition system is employed that facilitates serial co-sputtering. In this technique doping of the elementary target is enabled by a dynamic sputtering process from an auxiliary cathode. In our case, the rotating aluminium target is dynamically coated with tungsten from this auxiliary cathode. Since the primary target rotates, the auxiliary cathode is placed in series with the primary erosion zone. The deposition rate of Al(2)O(3) can be considerably increased in this process already for very low concentrations of approximately 1% of tungsten in the resulting film. A characterization of the dynamics of reactive sputtering as a function of target rotation speed is performed.

By the author/editor: Austgen, M; Koehl, D; Zalden, P; Kubart, Tomas; Nyberg, Tomas; Pflug, A; show more...; Siemers, M; Berg, Sören; Wuttig, M; show less...

About the subject

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