An extensive Raman spectroscopic investigation of ultrathin Co1-xNixSi2 films grown on Si(100)

Piao, Yinghua (author): State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina

Karabko, Aleksandra (author): Dept of Electronic Techniques and Technologies, Belarusian State University of Informatics and Radioelectronics, Minsk, Vitryssland

Hu, C (author): State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina

Qiu, Z.-J (author): State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina

Luo, Jun (author): Institute of Microelectronics, Chinese Academy of Sciences, Beijing, Kina

Wu, Donping (author): State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, Kina

(creator_code:org_t)

American Vacuum Society, 2012
2012
English.
In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 30:4, s. 041511-041518

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

Ultrathin silicide films were formed by starting from 1-8 nm thick Co1-xNix (x = 0, 0.25, 0.5, 0.75, and 1) at 350 degrees C-900 degrees C. For each composition x, there exists a critical thickness above which the transition temperature from monosilicides CoSi and NiSi to a disilicide-like phase increases with increasing film thickness. Below this thickness, the disilicide phase seems to form without exhibiting the monosilicides within the detection resolution limits of transmission electron microscopy and Raman spectroscopy. Raman spectroscopic analysis seems to indicate that Ni could be dissolved in the CoSi lattice to a certain fraction despite the fact that CoSi and NiSi are distinct with different crystallographic structures. Moreover, the disorder-induced Raman scattering in NiSi2 is found to be enhanced by Co incorporation. The observed annealing behaviors are attributed to variations in free energy change for phase transition caused by differences in metal thickness.

By the author/editor: Piao, Yinghua; Zhu, Zhiwei; Gao, Xindong; Karabko, Aleksan ...; Hu, C; Qiu, Z.-J; show more...; Luo, Jun; Zhang, Zhi-Bin; Zhang, Shi-Li; Wu, Donping; show less...

About the subject

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.