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Se concentration de...
Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
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Lee, Jae-chul (författare)
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Lee, Ji-eun (författare)
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Lee, Ju-won (författare)
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Lee, Jae-choon (författare)
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Subramaniam, N. G. (författare)
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Kang, Tae-won (författare)
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- Ahuja, Rajeev (författare)
- Uppsala universitet,Materialteori
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(creator_code:org_t)
- Elsevier BV, 2014
- 2014
- Engelska.
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Ingår i: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 585, s. 94-97
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.
Nyckelord
- ZnO
- Selenium
- PLD
- Band gap engineering
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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