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Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications

Lee, Jae-chul (author)
Lee, Ji-eun (author)
Lee, Ju-won (author)
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Lee, Jae-choon (author)
Subramaniam, N. G. (author)
Kang, Tae-won (author)
Ahuja, Rajeev (author)
Uppsala universitet,Materialteori
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 (creator_code:org_t)
Elsevier BV, 2014
2014
English.
In: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 585, s. 94-97
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.

Keyword

ZnO
Selenium
PLD
Band gap engineering

Publication and Content Type

ref (subject category)
art (subject category)

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