Search: id:"swepub:oai:DiVA.org:uu-213442" >
Se concentration de...
Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
-
Lee, Jae-chul (author)
-
Lee, Ji-eun (author)
-
Lee, Ju-won (author)
-
show more...
-
Lee, Jae-choon (author)
-
Subramaniam, N. G. (author)
-
Kang, Tae-won (author)
-
- Ahuja, Rajeev (author)
- Uppsala universitet,Materialteori
-
show less...
-
(creator_code:org_t)
- Elsevier BV, 2014
- 2014
- English.
-
In: Journal of Alloys and Compounds. - : Elsevier BV. - 0925-8388 .- 1873-4669. ; 585, s. 94-97
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0001) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (alpha h upsilon)(2) vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.
Keyword
- ZnO
- Selenium
- PLD
- Band gap engineering
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database