Low temperature electronic transport in sputter deposited a-IGZO films

• We report on the electrical properties of a-IGZO thin films prepared by reactive sputtering. Without oxygen injection, dc resistivity measured at room temperature is rho(300K) = 1.22 x 10(-3) Omega m. The lowest resistivity rho(300K) = 4.86 x 10(-5) Omega m is obtained at a certain oxygen supply into the deposition process. Hall effect measurements of these films reveal a metallic-like behavior from mobility and carrier concentration vs. temperature in the range 15-300 K whereas films deposited without oxygen or for the highest oxygen flows behave as semiconductors. These enhanced electrical properties are connected to the oxygen vacancies and the local coordination structure around the In3+ cations.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

A-IGZO films

Resistivity

Mobility

Carrier concentration

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

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