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A Subthreshold, Low-Power, RHBD Reference Circuit, for Earth Observation and Communication Satellites
- Andreou, Charalambos (author)
- Paccagnella, A. (author)
- González-Castaño, D.M. (author)
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- Gómez, F. (author)
- Liberali, V. (author)
- Calligaro, C. (author)
- Javanainen, A. (author)
- Virtanen, A. (author)
- Nahmad, D. (author)
- Georgiou, J. (author)
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- (creator_code:org_t)
- 2015
- 2015
- English.
- In: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on. - 9781479983919 ; , s. 2245-2248
- Conference paper (peer-reviewed)
Abstract
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- A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4 mu W and exhibits a measured Temperature Drift of 15ppm/degrees C for a temperature range of 190 degrees C (-60 degrees C to 130 degrees C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18 mu m standard CMOS technology and occupies a silicon area of 0.039mm(2). The proposed voltage reference is suitable for high-precision and low-power space applications.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Kommunikationssystem (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Communication Systems (hsv//eng)
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