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Influence of CdS and ZnxSn1-xOy Buffer Layers on the Photoluminescence of Cu(In,Ga)Se2 Thin Films
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- Leitao, J. P. (author)
- Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Teixeira, J. P. (author)
- Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Keller, Jan (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal. Fasta tillståndets elektronik (creator_code:org_t)
- New York : IEEE, 2016
- 2016
- English.
- In: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). - New York : IEEE. - 9781509027248 ; , s. 3068-3071
- Conference paper (peer-reviewed)
Abstract
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- In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se2 (CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited ZnxSn1xOy (ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.
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