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Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates
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- Sadowski, J (author)
- Uppsala universitet,Institutionen för materialvetenskap,SOLID STATE PHYSICS
- Mathieu, R (author)
- Svedlindh, P (author)
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- Domagala, JZ (author)
- Bak-Misiuk, J (author)
- Swiatek, K (author)
- Karlsteen, M (author)
- Kanski, J (author)
- Ilver, L (author)
- Asklund, H (author)
- Sodervall, U (author)
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- (creator_code:org_t)
- AMER INST PHYSICS, 2001
- 2001
- English.
- In: APPLIED PHYSICS LETTERS. - : AMER INST PHYSICS. - 0003-6951. ; 78:21, s. 3271-3273
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Ferromagnetic GaMnAs containing up to 10% Mn has been grown by migration-enhanced epitaxy at a substrate temperature of 150 degreesC. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.90 Angstrom, which deviates somewha
Keyword
- MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR (GAMN)AS; TRANSPORT-PROPERTIES; GAAS; FERROMAGNETISM; (GA;MN)AS
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- ref (subject category)
- art (subject category)
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- Mathieu, R
- Svedlindh, P
- Domagala, JZ
- Bak-Misiuk, J
- Swiatek, K
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- Karlsteen, M
- Kanski, J
- Ilver, L
- Asklund, H
- Sodervall, U
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