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Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures

Agui, A (author)
Uppsala universitet
Shin, S (author)
Uppsala universitet
Wu, C (author)
Uppsala universitet
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Shiba, K (author)
Uppsala universitet
Inoue, K (author)
Uppsala universitet
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 (creator_code:org_t)
AMERICAN PHYSICAL SOC, 1999
1999
English.
In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMERICAN PHYSICAL SOC. - 0163-1829. ; 59:16, s. 10792-10795
  • Journal article (other academic/artistic)
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  • Aluminum 2p soft-x-ray emission and absorption spectra (XES and XAS) of a GaAs/AIAs/GaAs heterostructure semiconductor have been measured with high-energy resolution. The Al 2p XES shows a similar feature to that of AlxGa1-xAs alloys. Strong Al 2p core ex

Keyword

X-RAY-EMISSION; ELECTRONIC-STRUCTURE; II SUPERLATTICES; QUANTUM-WELLS; ALXGA1-XAS; SEMICONDUCTORS; ABSORPTION; LAYERS

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Agui, A
Shin, S
Wu, C
Shiba, K
Inoue, K
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PHYSICAL REVIEW ...
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Uppsala University

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