Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors

Ankarcrona, Johan (author): Uppsala universitet,Fasta tillståndets elektronik

Eklund, Klas-Håkan (author): Uppsala universitet,Fasta tillståndets elektronik

Olsson, Jörgen, 1966- (author): Uppsala universitet,Fasta tillståndets elektronik

(creator_code:org_t)

Elsevier BV, 2004
2004
English.
In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 48:5, s. 789-797

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.1...; show less...

Abstract Subject headings

High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.

By the author/editor: Ankarcrona, Joha ...; Eklund, Klas-Håk ...; Vestling, Lars; Olsson, Jörgen, ...

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