Sökning: id:"swepub:oai:DiVA.org:uu-93921" >
Atomic layer deposi...
Atomic layer deposition of Zn1-xMgxO buffer layers for Cu(In,Ga)Se2 solar cells
-
- Törndahl, Tobias (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Platzer-Björkman, Charlotte (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
Kessler, John (författare)
-
visa fler...
-
- Edoff, Marika (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
visa färre...
-
(creator_code:org_t)
- 2007
- 2007
- Engelska.
-
Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 15:3, s. 225-235
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Fabrication of Zn1-xMgxO films by atomic layer deposition (ALD) has been studied for use as buffer layers in Cu(In,Ga)Se2 (CIGS)-based solar cell devices. The Zn1-xMgxO films were grown using diethyl zinc, bis-cyclopentadienyl magnesium and water as precursors in the temperature range from 105 to 180°C. Single-phase ZnO-like films were obtained for x < 0·2, followed by a two phase region of ZnO- and MgO-like structures for higher Mg concentrations. Increasing optical band gaps of up to above 3·8 eV were obtained for Zn1-xMgxO with increasing x. It was found that the composition of the Zn1-xMgxO films varied as an effect of deposition temperature as well as by increasing the relative amount of magnesium precursor pulses during film growth. Completely Cd-free CIGS-based solar cells devices with ALD-Zn1-xMgxO buffer layers were fabricated and showed efficiencies of up to 14·1%, which was higher than that of the CdS references.
Nyckelord
- atomic layer deposition
- Zn1-xMgxO
- Cu(In
- Ga)Se2
- band alignment
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas