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Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology
- Abermann, Stephan (author)
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- Sjöblom, Gustaf (author)
- Uppsala universitet,Fasta tillståndets elektronik
- Efavi, Johnson (author)
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- Lemme, Max (author)
- Bertagnolli, Emmerich (author)
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- (creator_code:org_t)
- 2006
- 2006
- English.
- In: Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS).
- Conference paper (peer-reviewed)
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