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Vertical nanowire III–V MOSFETs with improved high-frequency gain
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- Kilpi, Olli-Pekka (author)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Hellenbrand, Markus (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups
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- Svensson, Johannes (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups
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- (creator_code:org_t)
- 2020-06
- 2020
- English.
- In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:13, s. 669-671
- Journal article (peer-reviewed)
Abstract
Subject headings
Close
- High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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- art (subject category)
- ref (subject category)
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