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Electron accumulation in small and larger semiconductor quantum dots

Persson, Jonas (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Holm, Magnus (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Hessman, Dan (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Pistol, Mats-Erik (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Pryor, C. (author)
Samuelson, Lars (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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 (creator_code:org_t)
2002
2002
English 2 s.
In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • We present μ-PL and k·p calculations of self-assembled InP quantum dots (QDs) in GaInP. The QDs come in two subsets; the larger are pyramid shaped, and about 15 nm high with a base of about 40 by 50 nm, and the smaller have similar lateral extension but with a considerably lesser height. The change in size is accompanied by a change in quantum confinement and thus a change in emission energy. Moreover, there is a transition from a single sharp emission peak for the smallest dots to several 1 meV broad lines over a 50 meV range for the largest dots due to unintentional doping in the barrier material. The result is an electron accumulation in the QDs, and emission in an energy range corresponding to the energy range occupied by these electrons. Larger QDs accumulate more electrons and thus emit over a larger energy range. For the smaller dots we show that the precise position of the electronic ground state with respect to the Fermi level determines whether the dot is neutral or charged

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

energy range
electronic ground state
InP-InGaP
50 meV
1 meV
15 nm
semiconductor quantum dots
electron accumulation
PL
k.p calculations
Fermi level
self assembled InP quantum dots
quantum confinement
emission energy
single sharp emission peak
barrier material
unintentional doping

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kon (subject category)
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Persson, Jonas
Holm, Magnus
Hessman, Dan
Pistol, Mats-Eri ...
Pryor, C.
Samuelson, Lars
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NATURAL SCIENCES
NATURAL SCIENCES
and Physical Science ...
and Condensed Matter ...
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Lund University

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