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Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
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- Borgström, Magnus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Bryllert, Tomas (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
- Sass, T. (author)
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- (creator_code:org_t)
- 2002
- 2002
- English 2 s.
- In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
- Conference paper (peer-reviewed)
Abstract
Subject headings
Close
- We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- selective dot nucleation
- arsine ambient
- InAs-InP
- nanoholes
- patterned InP surface
- InAs quantum dots
- As/P exchange reactions
- annealing temperature
- annealing time
- InAs/InP site controlled quantum dot growth
- electron beam prepatterning forms
- carbon nanodeposits
- growth masks
- InP surface
Publication and Content Type
- kon (subject category)
- ref (subject category)
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