Surface engineering of SiC via sublimation etching

Jokubavicius, Valdas (author): Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten

Ivanov, Ivan G. (author): Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten

Niu, Yuran (author): Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Max Lab, Lund University

Zakharov, Alexei (author): Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,Max Lab, Lund University

Lakimov, Tihomir (author): Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten

Syväjärvi, Mikael (author): Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten

Yakimova, Rositsa (author): Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten

Yazdi, Gholamreza (author): Linköpings universitet,Halvledarmaterial,Tekniska fakulteten

(creator_code:org_t)

Amsterdam : Elsevier BV, 2016
2016
English 7 s.
In: Applied Surface Science. - Amsterdam : Elsevier BV. - 0169-4332 .- 1873-5584. ; 390, s. 816-822

Related links:: http://dx.doi.org/10...; show more...; https://lup.lub.lu.s...; https://doi.org/10.1...; https://urn.kb.se/re...; show less...

Abstract Subject headings

We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10−5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

By the author/editor: Jokubavicius, Va ...; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Lakimov, Tihomir; show more...; Syväjärvi, Mikae ...; Yakimova, Rosits ...; Yazdi, Gholamrez ...; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Chemical Science ...; and Materials Chemis ...

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