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Room-Temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires

Ma, Liang (author)
Hu, Wei (author)
Zhang, Qinglin (author)
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Ren, Pinyun (author)
Zhuang, Xiujuan (author)
Zhou, Hong (author)
Xu, Jinyou (author)
Li, Honglai (author)
Shan, Zhengping (author)
Wang, Xiaoxia (author)
Liao, Lei (author)
Xu, Hongqi (author)
Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Pan, Anlian (author)
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 (creator_code:org_t)
2014-01-03
2014
English.
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:2, s. 694-698
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

Keyword

Photodetector
near-infrared
Gabs/GaInSb
heterojtinction
nanowires
CVD

Publication and Content Type

art (subject category)
ref (subject category)

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