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Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
- Wen, C. -Y. (author)
- Tersoff, J. (author)
-
- Hillerich, Karla (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Reuter, M. C. (author)
- Park, J. H. (author)
- Kodambaka, S. (author)
- Stach, E. A. (author)
- Ross, F. M. (author)
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- (creator_code:org_t)
- 2011
- 2011
- English.
- In: Physical Review Letters. - 1079-7114. ; 107:2
- Journal article (peer-reviewed)
Abstract
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- Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- ref (subject category)
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- Wen, C. -Y.
- Tersoff, J.
- Hillerich, Karla
- Reuter, M. C.
- Park, J. H.
- Kodambaka, S.
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- Stach, E. A.
- Ross, F. M.
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