Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Larsson, Magnus (author): Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH

Wagner, Jakob (author): Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH

Wallin, Mathias (author): Lund University,Lunds universitet,Hållfasthetslära,Institutionen för byggvetenskaper,Institutioner vid LTH,Lunds Tekniska Högskola,Solid Mechanics,Department of Construction Sciences,Departments at LTH,Faculty of Engineering, LTH

Håkansson, Paul (author): Lund University,Lunds universitet,Hållfasthetslära,Institutionen för byggvetenskaper,Institutioner vid LTH,Lunds Tekniska Högskola,Solid Mechanics,Department of Construction Sciences,Departments at LTH,Faculty of Engineering, LTH

Fröberg, Linus (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Samuelson, Lars (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Wallenberg, Reine (author): Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH

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Abstract Subject headings

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

By the author/editor: Larsson, Magnus; Wagner, Jakob; Wallin, Mathias; Håkansson, Paul; Fröberg, Linus; Samuelson, Lars; show more...; Wallenberg, Rein ...; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Nano technology; and Nano technology

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